반도체 실험, 논문형식(영문)
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작성일 23-02-11 02:54본문
Download : REPORT 2nd - 복사본.docx
The overall procedure is divided into three steps. The first step is cutting aluminium foil and wrapping silicon wafer. Make aluminium foil have cross shaped hole, and the whole size should be enough to wrap silicon wafer. It is important to cut foil in proper size. During wrapping process, two things should be kept in mind. (1) Put cross shape at the front face of the silicon wafer. (2) Locate cross shape at the center of the silicon wafer. The next step is thermal evaporation. During this process, thermal evaporator is used to cover silicon wafer with vapor state of metal. 2 metals, aluminium and silver, were used as a coating material. 3 wafers were coated with silver, and the other 3 wafers were coated with aluminium.
세종대학교 신소재공학과 3학년 반도체 실험 레포트입니다.
세종대학교 신소재工學과 3학년 반도체 실험 레포트(report) 입니다.
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설명
레포트 > 공학,기술계열
Download : REPORT 2nd - 복사본.docx( 77 )
반도체 실험, 논문형식(영문)
deposition, Sputtering,
순서
다.