반도체 實驗(실험), 논문형식(영문)
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작성일 23-01-23 09:35
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Download : REPORT 4th - 복사본.docx
temperature, semiconductor, metal
순서
This entire experiment can be divided into 4 steps. First step is to cut 6 electric wires at the both ends with wire stripper and twist it. Next, cover the both ends of 2 fixed resistances(CFR and MFR) with soldering paste and attach electric wire by rotating to fix it hard. However, in case of silicon wafer, oxide layer needs to be scratched using diamond cutter. Next, make the end of electric wire and CFR or MFR stick each other using soldering iron. But in case of silicon wafer, make the end of electric wire stick to the scratched area of silicon wafer with silver paste. Finally, attach samples(CFR, MFR, silicon wafer) on the hot plate with polyimide tape and check how resistivity of each sample changes with increasing temperature.
A+받은 report이며 많은 도움 되었으면 좋곘습니다.
설명
세종대학교 신소재工學과 3학년 반도체 實驗(실험) report입니다.
To understand the basic principle, there are some things to know first. In case of metal, the relationship between temperature and vibration of atoms (which is called ‘phonon’) has to be understood first. But in case of semiconductor, the relationship between temperature and activation energy barrier has to be understood first.
Download : REPORT 4th - 복사본.docx( 58 )
반도체 實驗(실험), 논문형식(영문)
레포트 > 공학,기술계열
세종대학교 신소재공학과 3학년 반도체 실험 레포트입니다. A+받은 레포트이며 많은 도움 되었으면 좋곘습니다.
다.
